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DocxtoPDF.chm, docxto.chm, docxtopdf.chm, docxtopdf.chm,,,,1. Field of the Invention
The present invention relates to semiconductor devices and methods for producing the same.
2. Description of the Background Art
A narrow-width semiconductor device such as a semiconductor device with a gate length of 40 nm or less has been reported as a means to increase the operation speed of a high-performance transistor and reduce the size of a circuit. A conventional semiconductor device having a narrow-width channel has a problem that the gate electrode and a source/drain region come into contact with each other in a region outside the channel.
Conventionally, a known semiconductor device having a narrow-width channel includes shallow trench isolations (STIs) in a field region of the semiconductor device and a strained silicon layer formed on the STIs. Accordingly, the potential barrier of a region outside the channel between the gate electrode and the source/drain region is reduced, and thus the problem of the electrical contact between the gate electrode and the source/drain region in the region outside the channel can be avoided.
It should be noted that the STIs may disturb electrical potential of the source/drain regions by the electric field effect. Particularly, as the width of the STIs becomes narrow, the electric field effect becomes greater, and the electrical potential of the source
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