Moon Caves Mem Patch
![](http://news.wisc.edu/system/assets/108/original/Lunar_caves_1.jpg?1439563249)
Players are tasked to find a list of objects hidden within a particular scene, and to occasionally complete various mini-games/puzzles. The player can access the Diary at any time, but it will only provide information to the player when they’re within a scene where the diary can be found.
The player can access every scene while playing, and can interact with characters when they’re in those scenes. Scenes can be replayed at any time to complete puzzles and mini-games that haven’t been solved yet.
The player can restart a scene at any time (one-time restart), and even save or load a game at any time.
Players can accept various quests while completing the game. Each quest offers a specific reward.The present invention relates to semiconductor devices and their fabrication. In particular, the invention provides a method and device for a buried semiconductor well structure.
In the formation of semiconductor devices, it is desirable to form the various components of the device, such as transistors, within the device itself rather than to require later assembly of the semiconductor devices, such as into a package. This is particularly useful where the circuitry of the semiconductor device must be electrically coupled to the circuitry of an off-chip device.
The formation of integrated circuit structures, particularly including buried well regions, can be accomplished using plasma-etch techniques in a manner known to those skilled in the art. However, such techniques typically require the use of a polysilicon gate with a top gate oxide. The polysilicon gate is formed by depositing polysilicon and then the top gate oxide is deposited over the polysilicon. This requires that the top gate oxide and polysilicon be deposited before the formation of the buried well regions to prevent the polysilicon from interacting with the buried well regions. The top gate oxide must then be removed after the formation of the buried well regions. However, the removal of the top gate oxide results in a gate oxide integrity problem and is not desirable. Therefore, the formation of the buried well regions and the polysilicon gate of a semiconductor device is typically accomplished by first forming a buried well region and then forming a polysilicon gate over the buried well region.
In accordance with the present invention, a method of forming a buried semiconductor well region is provided. The method includes providing a substrate having a buried semiconductor well region formed therein and a first recess formed in the substrate. The first recess is defined by a top surface and a bottom surface of the