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Listen Free Songs:. michael jackson dangerous album mp3 free download in 360 kbs.There have been known forming methods of a semiconductor device by forming a semiconductor film on a substrate, and performing patterning to the formed semiconductor film, and thereafter, etching the substrate or the semiconductor film.
In these forming methods, it is necessary to perform photolithography using a mask for patterning a resist material for forming an insulating film or a semiconductor film. As one of the methods for performing this photolithography, a method of performing transfer to the mask by irradiating ultraviolet rays or the like is known.
As the material that is used as a semiconductor in these days, there are materials mainly having a polysilicon film, a silicon carbide film, or a silicon nitride film. Such an insulating film or semiconductor film with a polysilicon film, a silicon carbide film, or a silicon nitride film formed on the semiconductor film has a large surface electric field concentration. Therefore, when the semiconductor film is exposed to light by irradiating ultraviolet rays, the electric field concentration is easily concentrated on a local portion. In this case, the semiconductor film is deteriorated, and the semiconductor device is not brought into a satisfactory state. For example, when the insulating film is formed, the insulation resistance of the insulating film is deteriorated.
Therefore, as a method for protecting the semiconductor film from the light in forming the insulating film or semiconductor film, a method for protecting the semiconductor film by covering a substrate with a light protecting film having a small surface electric field concentration has been proposed. In the method, in order to irradiate ultraviolet rays for a long time without deteriorating the semiconductor device, the light protecting film is formed of a material having a larger absorption ratio for ultraviolet rays.
For example, PTL 1 describes that in the case where a silicon film is used as a semiconductor film, the light protecting film is formed of a silicon nitride film. In this case, a light protection film having a silicon film formed on a silicon nitride film is used as a mask for patterning the semiconductor film, the semiconductor film is patterned through etching, the silicon film is etched, and an etching residue occurs. Furthermore, the etching residue, if exists, increases the propagation amount of the high energy particles such as electrons or holes.
In addition, in a forming method of an oxide film
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